DSKTJ08 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon N-channel junction FET For AF impedance converter

Tentative
DSKTJ08
Total pages
page
DSKTJ08
Silicon N-channel junction FET
For AF impedance converter
Marking Symbol : CT, CU
Package Code : TSSSMini3-F2-B
Absolute Maximum Ratings　Ta = 25 °C
Parameter
Symbol Rating
Unit
Drain-source voltage(Gate open)
VDSO
20
V
Drain-gate voltage(Source open)
VDGO
20
V
Drain-source current(Gate open)
IDSO
2
mA
Drain-gate current(Source open)
IDGO
2
mA
power dissipation
PD
100
mW
Operating ambient temperature
Topr -20 to +80
°C
Storage temperature
Tstg -55 to +150 °C
Pin name
1. Drain
2. Source
3. Gate
Electrical Characteristics　Ta = 25 °C±3 °C
Parameter
Drain current ^*1,*4
Symbol
Conditions
ID VDD = 2.0 V, Rd = 2.2 kΩ ± 1%
Min Typ Max Unit
180
470 μA
Drain-source current ^*4
IDSS
VDD = 2.0 V, Rd = 2.2 kΩ ± 1%,
VGS = 0
190
460 μA
Mutual conductance
gm VDS = 2.0 V, VGS = 0, f = 1 kHz 660 1 500
μS
Noise voltage ^*2
VDD = 2.0 V, Rd = 2.2 kΩ ± 1%
NV _{Co = 5 pF, A-curve}
10
μV
Voltage gain
Voltage gain difference ^*3
VDD = 2.0 V, Rd = 2.2 kΩ ± 1%
GV1 _{Co = 5 pF, eG = 10 mV, f = 1 kHz}
-5.0 -1.0
GV2
VDD = 1.5 V, Rd = 2.2 kΩ ± 1%
Co = 5 pF, eG = 10 mV, f = 1 kHz
VDD = 2.0 V, Rd = 2.2 kΩ ± 1%
-7.0 -1.5
dB
Δ | GV・f | Co = 5 pF, eG = 10 mV
0 1.7
f = 1 kHz to 70 Hz
Voltage gain difference
｜GV1-GV2｜
0
2.0
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
2. A protection diode is built-in between gate and source of transistor. However if forward current
flows between gate and source transistor might be damaged. So please be careful not insert reverse.
3. *1 ID is assured for IDSS.
*2 NV is assured for design.
*3 Δ|GV . f | is assured for AQL 0.065. (The measurement method is used by source-grounded circuit.)
*4 Rank classification
Code
T
U
Rank
T
U
ID
180 to 320 280 to 470
IDSS
190 to 310 290 to 460
Marking symbo
CT
CU
Packing
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel
2010.05.31 2010.7.29
Prepared Revised
Semiconductor Company，Panasonic Corporation