DSK9J01 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon N-channel Junction FET

This product complies with the RoHS Directive (EU 2002/95/EC).
DSK9J01
Silicon N-channel Junction FET
For low frequency amplification
For pyroelectric sensor
DSK5J01 in SSMini3 type package
 Features
 High gate-drain voltage (source open) V_GDO
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Gate-drain breakdown voltage
V_GDS
–55
V
Drain current
I_D
30
mA
Gate current
I_G
10
mA
Power dissipation
P_D
125
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg –55 to +150 °C
 Package
 Code
SSMini3-F3-B
 Pin Name
1: Source
2: Drain
3: Gate
 Marking Symbol: B6
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Gate-drain breakdown voltage
V_GDS I_G = –100 mA, V_DS = 0
–55
V
Drain-source cutoff current ^*
I_DSS V_DS = 10 V, V_GS = 0
1.0
6.5
mA
Gate-source cutoff current
I_GSS V_GS = –30 V, V_DS = 0
–10
nA
Gate-source cutoff voltage
V_GSC V_DS = 10 V, I_D = 10 mA
–5
V
Forward transfer admittance
Y_fs V_DS = 10 V, I_D = 5 mA, f = 1 MHz
2.5 7.5
mS
Short-circuit input capacitance (Common source) C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
Reverse transfer capacitance (Common source) C_rss
6.0
pF
2.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
P
Q
Rank
P
Q
I_DSS
1.0 to 3.0
2.0 to 6.5
Marking Symbol
B6P
B6Q
Publication date: October 2010
Ver. AED
1