DSC9G02C0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DSC9G02
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC5G02 in SSMini3 type package
 Features
 High forward current transfer ratio h_FE with excellent linearity
 High transition frequency f_T
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
30
V
V_CEO
20
V
V_EBO
3
V
I_C
15
mA
P_C
125
mW
T_j
150
°C
T_stg –55 to +150 °C
 Package
 Code
SSMini3-F3-B
 Pin Name
1. Base
2. Emitter
3. Collector
 Marking Symbol: C5
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
V_CBO I_C = 10 mA, I_E = 0
30
Emitter-base voltage (Collector open)
V_EBO I_E = 10 mA, I_C = 0
3
Base-emitter voltage
Forward current transfer ratio ^*
V_BE V_CE = 6 V, I_C = 1 mA
h_FE V_CE = 6 V, I_C = 1 mA
0.72
65
260
Transition frequency
Reverse transfer capacitance
(Common emitter)
f_T V_CE = 6 V, I_C = 1 mA
C_re V_CE = 6 V, I_C = 1 mA , f = 10.7 MHz
450 650
0.6
Power gain
PG V_CE = 6 V, I_C = 1 mA , f = 100 MHz
24
Noise figure
NF V_CE = 6 V, I_C = 1 mA , f = 100 MHz
3.3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
C
D
0
Rank
C
D
No-rank
h_FE
Marking Symbol
65 to 160
C5C
100 to 260
C5D
65 to 260
C5
Product of no-rank is not classified and have no marking symbol for rank.
Unit
V
V
V

MHz
pF
dB
dB
Publication date: September 2010
Ver. AED
1