DSC2501S0L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DSC2501
Silicon NPN epitaxial planar type
For low frequency amplification
 Features
 Low collector-emitter saturation voltage V_CE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V_CBO
25
V
V_CEO
20
V
V_EBO
12
V
I_C
0.5
A
I_CP
1
A
P_C
200
mW
T_j
150
°C
T_stg –55 to +150 °C
 Package
 Code
Mini3-G3-B-B
 Pin Name
1. Base
2. Emitter
3. Collector
 Marking Symbol: E3
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
V_CBO I_C = 10 mA, I_E = 0
25
Collector-emitter voltage (Base open)
V_CEO I_C = 1 mA, I_B = 0
20
Emitter-base voltage (Collector open)
V_EBO I_E = 10 mA, I_C = 0
12
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*2
Collector-emitter saturation voltage ^*1
Base-emitter saturation voltage ^*1
I_CBO
h_FE
V_CE(sat)
V_BE(sat)
V_CB = 25 V, I_E = 0
V_CE = 2 V, I_C = 0.5 A
I_C = 0.5 A, I_B = 20 mA
I_C = 0.5 A, I_B = 50 mA
100
200
800
0.18 0.40
1.2
Transition frequency
f_T V_CE = 10 V, I_C = 50 mA
150
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
6
ON resistance ^*3
R_on
1.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
R
S
T
0
Rank
R
S
T
No-rank
h_FE
Marking Symbol
200 to 350
E3R
300 to 500
E3S
400 to 800
E3T
200 to 800
E3
Product of no-rank is not classified and have no marking symbol for rank.
*3: Ron measurement circuit
1 kΩ
Unit
V
V
V
nA

V
V
MHz
pF
Ω
V_B V_V V_A
f = 1 kHz
V = 0.3 V
R_on =
V_{B ×} 1 000
V_A − V_B
(Ω)
Publication date: June 2010
ZJC00467AED
1