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DSA7504 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type For low frequency amplification | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7504
Silicon PNP epitaxial planar type
For low frequency ampliï¬cation
ï¢ Features
ï Low collector-emitter saturation voltage VCE(sat)
ï Contributes to miniaturization of sets, reduction of component count.
ï Eco-friendly Halogen-free package
ï¢ Package
ï Code
MiniP3-F2-B
Package dimension clicks here.â
Click!
ï¢ Packaging
DSA7504Ã0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
VCBO
â30
V
Collector-emitter voltage (Base open)
VCEO
â20
V
Emitter-base voltage (Collector open)
VEBO
â7
V
Collector current
IC
â4
A
Peak collector current
ICP
â7
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for PC is 0.5 W
ï Pin Name
1. Base
2. Collector
3. Emitter
ï¢ Marking Symbol: 4F
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = â10 mA, IE = 0
â30
Collector-emitter voltage (Base open)
VCEO IC = â1 mA, IB = 0
â20
Emitter-base voltage (Collector open)
VEBO IE = â10 mA, IC = 0
â7
Collector-base cutoff current (Emitter open) ICBO VCB = â30 V, IE = 0
â 0.1
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
IEBO
hFE
VCE(sat)
VEB = â7 V, IC = 0
VCE = â2 V, IC = â2 A
IC = â3 A, IB = â 0.1 A
â 0.1
120
315
â 0.7 â1.0
Transition frequency
fT VCE = â6 V, IC = â50 mA
180
Collector output capacitance
(Common base, input open circuited)
Cob VCB = â20 V, IE = 0, f = 1 MHz
30
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classiï¬cation
Code
Q
R
0
Rank
Q
R
No-rank
hFE
Marking Symbol
120 to 205
4FQ
180 to 315
4FR
120 to 315
4F
Product of no-rank is not classiï¬ed and have no marking symbol for rank.
Unit
V
V
V
mA

V
MHz
pF
Publication date: May 2012
Ver. BED
1
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