DSA7003 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type For low frequency output amplification Complementary

This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7003
Silicon PNP epitaxial planar type
For low frequency output amplification
Complementary to DSC7003
DSA8003 in MiniP3 type package
 Features
 Low collector-emitter saturation voltage V_CE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
DSA7003×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
V_CBO
–60
V
Collector-emitter voltage (Base open)
V_CEO
–50
V
Emitter-base voltage (Collector open)
V_EBO
–5
V
Collector current
I_C
–1
A
Peak collector current
I_CP
–1.5
A
Collector power dissipation ^*
P_C
1
W
Junction temperature
T_j
150
°C
Storage temperature
T_stg –55 to +150 °C
Note) *: Printed circuit board: Copper foil area of 1 cm² or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for P_C is 0.5 W
 Package
 Code
MiniP3-F2-B
Package dimension clicks here.→
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 Pin Name
1. Base
2. Collector
3. Emitter
 Marking Symbol: 4A
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*1
Collector-emitter saturation voltage ^*1
Base-emitter saturation voltage ^*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V_CBO
V_CEO
V_EBO
I_CBO
h_FE1 ^*2
h_FE2
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_C = –10 mA, I_E = 0
I_C = –2 mA, I_B = 0
I_E = –10 mA, I_C = 0
V_CB = –20 V, I_E = 0
V_CE = –10 V, I_C = –500 mA
V_CE = –5 V, I_C = –1 A
I_C = –500 mA, I_B = –50 mA
I_C = –500 mA, I_B = –50 mA
V_CE = –10 V, I_C = –50 mA
V_CB = –10 V, I_E = 0, f = 1 MHz
–60
–50
–5
– 0.1
120
340
50
– 0.4
–1.2
120
14.5 30
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
R
S
0
Rank
R
S
No-rank
h_FE1
Marking Symbol
120 to 240
4AR
170 to 340
4AS
120 to 340
4A
Product of no-rank is not classified and have no marking symbol for rank.
Unit
V
V
V
mA

V
V
MHz
pF
Publication date: May 2012
Ver. EED
1