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DSA5001 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA5001
Silicon PNP epitaxial planar type
For general amplification
Complementary to DSC5001
 Features
 High forward current transfer ratio hFE with excellent linearity
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
–60
V
VCEO
–50
V
VEBO
–7
V
IC
–100
mA
ICP
–200
mA
PC
150
mW
Tj
150
°C
Tstg –55 to +150 °C
 Package
 Code
SMini3-F2-B
 Pin Name
1. Base
2. Emitter
3. Collector
 Marking Symbol: A1
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = –10 mA, IE = 0
–60
Collector-emitter voltage (Base open)
VCEO IC = –2 mA, IB = 0
–50
Emitter-base voltage (Collector open)
VEBO IE = –10 mA, IC = 0
–7
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0
– 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = –10 V, IB = 0
Forward current transfer ratio *
hFE VCE = –10 V, IC = –2 mA
–100
210
460
Collector-emitter saturation voltage
VCE(sat) IC = –100 mA, IB = –10 mA
– 0.2 – 0.5
Transition frequency
fT VCE = –10 V, IC = –2 mA
150
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
R
S
0
Rank
R
S
No-rank
hFE
Marking Symbol
210 to 340
A1R
290 to 460
A1S
210 to 460
A1
Product of no-rank is not classified and have no marking symbol for rank.
Unit
V
V
V
mA
mA

V
MHz
pF
Publication date: November 2009
ZJC00436BED
1