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DRA5124E Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5124E | |||
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DRA5124E
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC5124E
DRA2124E in SMini3 type package
Unit: mm
ï¢ Features
ï Low collector-emitter saturation voltage VCE(sat)
ï Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
ï¢ Marking Symbol: LE
ï¢ Packaging
DRA5124E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
â50
V
VCEO
â50
V
IC
â100
mA
PT
150
mW
Tj
150
°C
Tstg â55 to +150 °C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
R1
B
R2
SMini3-F2-B
SC-85

C
E
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Resistance value
R1
22
R2
22
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = â10 µA, IE = 0
â50
Collector-emitter voltage (Base open)
VCEO IC = â2 mA, IB = 0
â50
Collector-base cutoff current (Emitter open) ICBO VCB = â50 V, IE = 0
â 0.1
Collector-emitter cutoff current (Base open) ICEO VCE = â50 V, IB = 0
â 0.5
Emitter-base cutoff current (Collector open) IEBO VEB = â6 V, IC = 0
â 0.2
Forward current transfer ratio
hFE VCE = â10 V, IC = â5 mA
60
Collector-emitter saturation voltage
VCE(sat) IC = â10 mA, IB = â 0.5 mA
â 0.25
Input voltage (ON)
VI(on) VCE = â 0.2 V, IC = â5 mA
â2.6
Input voltage (OFF)
VI(off) VCE = â5 V, IC = â100 µA
â 0.8
Input resistance
R1
â30% 22 +30%
Resistance ratio
R1 / R2
0.8
1.0
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
kΩ
kΩ
Unit
V
V
µA
µA
mA

V
V
V
kΩ

Publication date: November 2012
Ver. DED
1
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