DRA5113Z0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – For digital circuits Complementary to DRC5113Z DRA2113Z in SMini3 type package

Doc No. TT4-EA-11569
Revision. 3
Product Standards
Transistors with Built-in Resistor
DRA5113Z0L
DRA5113Z0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC5113Z
DRA2113Z in SMini3 type package
Unit: mm
2.0
0.3
0.13
 Features
3
 Low collector-emitter saturation voltage Vce(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
1
2
 Marking Symbol: L1
0.9
(0.65)(0.65)
 Packaging
1.3
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1. Base
2. Emitter
3. Collector
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
VCBO
-50
V
Collector-emitter voltage (Base open)
VCEO
-50
V
Collector current
IC
-100
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -55 to +150 °C
Panasonic
JEITA
Code
SMini3-F2-B
SC-85
―
Internal Connection
R₁
C
B
R₂
E
Resistance R1 1 k
value
R2 10 k
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = -10 μA, IE = 0
-50
V
Collector-emitter voltage (Base open)
VCEO IC = -2 mA, IB = 0
-50
V
Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0
-0.1 μA
Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0
-0.5 μA
Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0
-1.5 mA
Forward current transfer ratio
hFE VCE = -10 V, IC = -5 mA
30
-
Collector-emitter saturation voltage
VCE(sat) IC = -10 mA, IB = -0.5 mA
-0.25 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-1.0
V
-0.4
V
Input resistance
R1
-30% 1 +30% k
Resistance ratio
R1/R2
0.08 0.1 0.12
-
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page 1 of 3
Established : 2009-10-14
Revised : 2014-01-17