DMT9FK01 Datasheet, PDF (1/6 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DMT9FK01
Silicon epitaxial planar type (Diode)
Silicon PNP epitaxial planar type (Tr)
For high speed switching circuits
For digital circuits
 Features
 Two elements incorporated into one package (SBD + Tr)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Basic Part Number
DRAQA44E + DB2S311 (Individual)
 Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Reverse voltage
V_R
30
V
Repetitive peak reverse voltage
V_RRM
30
V
Diode Forward current (Average)
I_F(AV)
200
mA
Peak forward current
I_FM
300
mA
Non-repetitive peak forward surge current ^* I_FSM
1
A
Collector-base voltage (Emitter open) V_CBO
–50
V
Tr Collector-emitter voltage (Base open) V_CEO
–50
V
Collector current
I_C
–100
mA
Total power dissipation ^*
P_T
125
mW
Overall Junction temperature
T_j
125
°C
Storage temperature
T_stg –55 to +150 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Package
 Code
SSMini5-F4-B
 Pin Name
1: Anode
2: Base
3: Emitter
4: Collector
5: Cathode
 Marking Symbol: X2
 Internal Connection
(K)
(C)
5
4
R₁
Di
Tr
R₂
1
2
3
(A) (B) (E)
Resistance
value
R₁ 47 kΩ
R₂ 47 kΩ
Publication date: September 2010
Ver. AED
1