DMS935E2 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E2
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
 Features
 Two elements incorporated into one package (Tr + CCD load device)
 High transition frequency f_T
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Basic Part Number
DSC2G03 + CCD load device (Individual)
 Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open) V_CBO
30
V
Collector-emitter voltage (Base open) V_CEO
20
V
Tr1
Emitter-base voltage (Collector open) V_EBO
3
V
Collector current
I_C
50
mA
CCD ^{Limiting element voltage}
load device _{Limiting element current}
V_max
40
V
I_max
10
mA
Total power dissipation ^*
P_T
125
mW
Overall Junction temperature
T_j
150
°C
Storage temperature
T_stg –55 to +150 °C
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
 Package
 Code
SSMini6-F3-B
 Pin Name
1: Emitter
2: Base
3: Gate
4: Source
5: Drain
6: Collector
 Marking Symbol: X1
 Internal Connection
(C) (D) (S)
6
5
4
Tr
FET
1
2
3
(E) (B) (G)
 Electrical Characteristics T_a = 25°C±3°C
 Tr1
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
V_CBO I_C = 100 µA, I_E = 0
30
Emitter-base voltage (Collector open)
V_EBO I_E = 10 µA, I_C = 0
3
Base-emitter voltage
V_BE V_CE = 10 V, I_C = 2 mA
750
Forward current transfer ratio
h_FE V_CE = 10 V, I_C = 2 mA
100
250
Transition frequency
f_T V_CE = 10 V, I_C = 15 mA
1 300
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Unit
V
V
mV

MHz
 CCD load device
Parameter
Symbol
Conditions
Min Typ Max Unit
Pinchi off current
I_P V_DS = 8 V, V_G = 0
5.0
7.0
mA
Output impedance
Z_O V_DS = 8 V, V_G = 0
0.02
mW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2010
Ver. BED
1