|
DMR935E1 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
|
This product complies with the RoHS Directive (EU 2002/95/EC).
DMR935E1
Silicon PNP epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
ï¢ Features
ï Two elements incorporated into one package (Tr + CCD load device)
ï High transition frequency fT
ï Contributes to miniaturization of sets, reduction of component count.
ï Eco-friendly Halogen-free package
ï¢ Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO
â24
V
Collector-emitter voltage (Base open) VCEO
â20
V
Tr1
Emitter-base voltage (Collector open) VEBO
â3
V
Collector current
IC
â50
mA
CCD Limiting element voltage
load device Limiting element current
Vmax
40
V
Imax
10
mA
Total power dissipation *
PT
125
mW
Overall Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
Note) *: Measuring on substrate at 17 mm à 10 mm à 1 mm
ï¢ Package
ï Code
SSMini6-F3-B
ï Pin Name
1: Emitter
2: Base
3: Gate
4: Source
5: Drain
6: Collector
ï¢ Marking Symbol: X4
ï¢ Internal Connection
(C) (D) (S)
6
5
4
Tr
FET
1
2
3
(E) (B) (G)
ï¢ Electrical Characteristics Ta = 25°C±3°C
ï Tr1
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = â100 µA, IE = 0
â24
Emitter-base voltage (Collector open)
VEBO IE = â10 µA, IC = 0
â3
Base-emitter voltage
VBE VCE = â10 V, IC = â2 mA
720
Forward current transfer ratio
hFE VCE = â10 V, IC = â2 mA
100
250
Transition frequency
fT VCE = â10 V, IC = â2 mA
1 400
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Unit
V
V
mV

MHz
ï CCD load device
Parameter
Symbol
Conditions
Min Typ Max Unit
Pinchi off current
IP VDS = 10 V, VG = 0
3.8
5.2
mA
Output impedance
ZO VDS = 10 V, VG = 0
0.05
mW
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2010
Ver. AED
1
|
▷ |