DMC506E20R Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – For high-frequency amplification DMC206E2 in SMini6 type package

This product complies with the RoHS Directive (EU 2002/95/EC).
DMC506E2
Silicon NPN epitaxial planar type
For high-frequency amplification
DMC206E2 in SMini6 type package
 Features
 High transition frequency f_T
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Basic Part Number
Dual DSC2G02 (Individual)
 Packaging
DMC506E20R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
V_CBO
30
V
V_CEO
20
V
V_EBO
3
V
I_C
15
mA
P_T
150
mW
T_j
150
°C
T_stg –55 to +150 °C
 Package
 Code
SMini6-F3-B
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 Pin Name
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
 Marking Symbol: D2
 Internal Connection
(C1) (B1) (C2)
6
5
4
Tr2
Tr1
1
2
3
(E1) (E2) (B2)
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
V_CBO I_C = 10 µA, I_E = 0
30
Collector-emitter voltage (Base open)
V_EBO I_E = 10 µA, I_C = 0
3
Base-emitter voltage
V_BE V_CE = 6 V, I_C = 1 mA
0.72
Forward current transfer ratio
h_FE V_CE = 6 V, I_C = 1 mA
65
260
Transition frequency
f_T V_CE = 6 V, I_C = 1 mA
450 650
Reverse transfer capacitance(Common emitter) C_re V_CE = 6 V, I_C = 1 mA, f = 10.7 MHz
0.6
Power gain
PG V_CE = 6 V, I_C = 1 mA, f = 100 MHz
24
Noise figure
NF V_CE = 6 V, I_C = 1 mA, f = 100 MHz
3.3
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
V

MHz
pF
dB
dB
Publication date: February 2012
Ver. CED
1