DMC204020R Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type

DMC20402
Silicon NPN epitaxial planar type
For general amplification
 Features
 High forward current transfer ratio h_FE with excellent linearity
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: B6
 Basic Part Number
Dual DSC2002 (Individual)
 Packaging
DMC204020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Tr2
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
V_CBO
60
V
V_CEO
50
V
V_EBO
5
V
I_C
500
mA
I_CP
1
A
P_T
300
mW
T_j
150
°C
T_stg –55 to +150 °C
Unit: mm
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Mini6-G4-B
SC-74
SOT-457
(C1) (B2) (E2)
6
5
4
Tr1
Tr2
1
2
3
(E1) (B1) (C2)
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*1
Collector-emitter saturation voltage
Transition frequency
V_CBO
V_CEO
V_EBO
I_CBO
h_FE1
h_FE2
V_CE(sat)
f_T
I_C = 10 µA, I_E = 0
I_C = 2 mA, I_B = 0
I_E = 10 µA, I_C = 0
V_CB = 20 V, I_E = 0
V_CE = 10 V, I_C = 150 mA
V_CE = 10 V, I_C = 500 mA
I_C = 300 mA, I_B = 30 mA
V_CE = 10 V, I_C = 50 mA
60
50
5
0.1
120
340
40
0.1 0.6
160
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = 10 V, I_E = 0, f = 1 MHz
4.8
15
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
Unit
V
V
V
µA

V
MHz
pF
Publication date: January 2013
Ver. CED
1