DMA90401 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type For general amplification DMA50401 in SSMini6 type package

DMA90401
Silicon PNP epitaxial planar type
For general amplification
DMA50401 in SSMini6 type package
 Features
 High forward current transfer ratio h_FE with excellent linearity
 Low collector-emitter saturation voltage V_CE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: A7
 Basic Part Number
Double DSA2001 (Individual)
 Packaging
DMA904010R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Tr2
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
V_CBO
–60
V
V_CEO
–50
V
V_EBO
–7
V
I_C
–100
mA
I_CP
–200
mA
P_T
125
mW
T_j
150
°C
T_stg –55 to +150 °C
Unit: mm
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Panasonic
JEITA
Code
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F3-B
SC-107C
SOT-666
(C1) (B2) (E2)
6
5
4
Tr1
Tr2
1
2
3
(E1) (B1) (C2)
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
V_CBO
V_CEO
V_EBO
I_CBO
I_CEO
h_FE
V_CE(sat)
f_T
I_C = –10 µA, I_E = 0
I_C = –2 mA, I_B = 0
I_E = –10 µA, I_C = 0
V_CB = –20 V, I_E = 0
V_CE = –10 V, I_B = 0
V_CE = –10 V, I_C = –2 mA
I_C = –100 mA, I_B = –10 mA
V_CB = –10 V, I_C = –2 mA
–60
–50
–7
– 0.1
–100
210
460
– 0.2 – 0.5
150
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = –10 V, I_E = 0, f = 1 MHz
2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
V
µA
µA

V
MHz
pF
Publication date: January 2013
Ver. EED
1