DMA502010 Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

DMA50201
Silicon PNP epitaxial planar type
For general amplification
DMA20201 in SMini5 type package
 Features
 High forward current transfer ratio h_FE with excellent linearity
 Low collector-emitter saturation voltage V_CE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: A5
Unit: mm
 Basic Part Number
Dual DSA2001 (Common Base)
 Packaging
DMA502010R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Tr2
Collector current
Peak collector current
Total power dissipation
Junction temperature
Overall
Operating ambient temperature
Storage temperature
V_CBO
–60
V
V_CEO
–50
V
V_EBO
–7
V
I_C
–100
mA
I_CP
–200
mA
P_T
150
mW
T_j
150
°C
T_opr –40 to +85 °C
T_stg –55 to +150 °C
1: Emitter (Tr1)
2: Base (Common)
3: Emitter (Tr2)
Panasonic
JEITA
Code
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-F3-B
SC-113CB
SOT-353
(C1)
(C2)
5
4
Tr1
Tr2
123
(E1) (B) (E2)
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
V_CBO I_C = –10 µA, I_E = 0
Collector-emitter voltage (Base open)
V_CEO I_C = –2 mA, I_B = 0
Emitter-base voltage (Collector open)
V_EBO I_E = –10 µA, I_C = 0
Collector-base cutoff current (Emitter open) I_CBO V_CB = –20 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = –10 V, I_B = 0
Forward current transfer ratio
h_FE V_CE = –10 V, I_C = –2 mA
h_FE ratio ^*1
h_FE
(Small/Large)
V_CE = –10 V, I_C = –2 mA
Collector-emitter saturation voltage
V_CE(sat) I_C = –100 mA, I_B = –10 mA
Transition frequency
f_T V_CE = –10 V, I_C = –2 mA
–60
–50
–7
– 0.1
–100
210
460
0.50 0.99
– 0.2 – 0.5
150
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = –10 V, I_E = 0, f = 1 MHz
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
Publication date: December 2013
Ver. DED
Unit
V
V
V
µA
µA


V
MHz
pF
1