DMA30401 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

Tentative
DMA30401
Total pages
page
DMA30401
Silicon PNP epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For general amplification
Marking Symbol : A7
Package Code : SSSMini6-F2-B
Absolute Maximum Ratings　Ta = 25 °C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
VCBO
-60
V
Tr1
Tr2
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCEO
VEBO
-50
-7
V
V
Collector current
IC
-100
mA
Peak collector current
Total power dissipation ^*1
ICp
-200
mA
PT
125
mW
Overall Junction temperature
Tj
150
°C
Storage temperature
Tstg -55 to +150 °C
Note: 1. *1 Measuring on substrate at 17 mm × 10 mm × 1 mm
Internal Connection
6
5
4
Tr 1
Tr 2
1
2
3
Pin name
1. Emitter(Tr1) 4. Emitter(Tr2)
2. Base(Tr1)
5. Base(Tr2)
3. Collector(Tr2) 6. Collector(Tr1)
Electrical Characteristics　Ta = 25 °C ±3 °C
Tr1, Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
VCBO IC = -10 μA, IE = 0
-60
V
Collector-emitter voltage (Base open)
VCEO IC = -2 mA, IB = 0
-50
V
Emitter-base voltage (Collector open)
VEBO IE = -10 μA, IC = 0
-7
V
Collector-base cutoff current (Emitter open) ICBO VCB = -20 V, IE = 0
-0.1 μA
Collector-emitter cutoff current (Base open) ICEO VCE = -10 V, IB = 0
-100 μA
Forward current transfer ratio
hFE VCE = -10 V, IC = -2mA
210
460
-
Collector-emitter saturation voltage
VCE(sat) IC = -100 mA, IB = -10 mA
-0.2 -0.5
V
Transition frequency
fT VCE = -10 V, IC = -2 mA
150
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = -10 V, IE = 0, f = 1 MHz
2
pF
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
Packing
Embossed type (Thermo-compression sealing) R specification : 10 000 pcs / reel
2010.3.1
Prepared
2010.9.6
Revised
Semiconductor Company, Panasonic Corporation