DMA2610H0R Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

DMA2610H
Silicon PNP epitaxial planar type
For digital circuits
Unit: mm
 Features
 Low collector-emitter saturation voltage V_CE(sat)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: R4
 Basic Part Number
Dual DRA2123Y (Common emitter)
 Packaging
DMA2610H0R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Tr2
Collector current
Total power dissipation
Junction temperature
Overall
Operating ambient temperature
Storage temperature
V_CBO
–50
V
V_CEO
–50
V
I_C
–100
mA
P_T
300
mW
T_j
150
°C
T_opr –40 to +85 °C
T_stg –55 to +150 °C
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Panasonic
JEITA
Code
4: Collector (Tr2)
5: Collector (Tr1)
Mini5-G3-B
SC-74A
MO-178
(C1)
(C2)
5
4
Tr1
R₂
R₁
Tr2
R₂
R₁
123
(B1) (E) (B2)
Resistance value
R₁
2.2 kΩ
R₂
10
kΩ
Min Typ Max Unit
Collector-base voltage (Emitter open)
V_CBO I_C = –10 µA, I_E = 0
–50
V
Collector-emitter voltage (Base open)
V_CEO I_C = –2 mA, I_B = 0
–50
V
Collector-base cutoff current (Emitter open) I_CBO V_CB = –50 V, I_E = 0
– 0.1 µA
Collector-emitter cutoff current (Base open) I_CEO V_CE = –50 V, I_B = 0
– 0.5 µA
Emitter-base cutoff current (Collector open) I_EBO V_EB = –6 V, I_C = 0
–1.0 mA
Forward current transfer ratio
h_FE V_CE = –10 V, I_C = –5 mA
30

h_FE ratio ^*1
h_FE
(Small/Large)
V_CE = –10 V, I_C = –5 mA
0.50 0.99

Collector-emitter saturation voltage
V_CE(sat) I_C = –10 mA, I_B = – 0.5 mA
– 0.25 V
Input voltage (ON)
V_I(on) V_CE = – 0.2 V, I_C = –5 mA
–1.1
V
Input voltage (OFF)
V_I(off) V_CE = –5 V, I_C = –100 µA
– 0.5
V
Input resistance
R₁
–30% 2.2 +30% kΩ
Resistance ratio
R₁ / R₂
0.17 0.22 0.27

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Ratio between 2 elements
Publication date: September 2013
Ver. DED
1