DMA206E1 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DMA206E1
Silicon PNP epitaxial planar type
For high-frequency amplification
 Features
 High transition frequency f_T
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Basic Part Number
Dual DSA2G01 (Individual)
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
V_CBO
–30
V
V_CEO
–20
V
V_EBO
–5
V
I_C
–30
mA
P_T
300
mW
T_j
150
°C
T_stg –55 to +150 °C
 Package
 Code
Mini6-G4-B
 Pin Name
1: Emitter (Tr1)
2: Emitter (Tr2)
3: Base (Tr2)
4: Collector (Tr2)
5: Base (Tr1)
6: Collector (Tr1)
 Marking Symbol: C9
 Internal Connection
(C1) (B1) (C2)
6
5
4
Tr2
Tr1
1
2
3
(E1) (E2) (B2)
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Base-emitter voltage
V_BE V_CE = –10 V, I_C = –1 mA
Collector-base cutoff current (Emitter open) I_CBO V_CB = –10 V, I_E = 0
Collector-emitter cutoff current (Base open) I_CEO V_CE = –20 V, I_B = 0
Emitter-base cutoff current (Collector open) I_EBO V_EB = –5 V, I_C = 0
Forward current transfer ratio
h_FE V_CE = –10 V, I_C = –1 mA
h_FE ratio ^*
h_FE
(Small/Large)
V_CE = –10 V, I_C = –1 mA
Collector-emitter saturation voltage
V_CE(sat) I_C = –10 mA, I_B = –1 mA
Transition frequency
f_T V_CE = –10 V, I_C = –1 mA
– 0.7
– 0.1
–100
–10
70
220
0.50 0.99
– 0.1
150 300
Reverse transfer capacitance
(Common emitter)
C_re V_CE = –10 V, I_C = –1 mA, f = 10.7 MHz
1.0
Noise figure
NF V_CE = –10 V, I_C = –1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Z_rb V_CE = –10 V, I_C = –1 mA, f = 2 MHz
22
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Unit
V
µA
µA
µA


V
MHz
pF
dB
W
Publication date: September 2010
Ver. AED
1