DMA204A0 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DMA204A0
Silicon PNP epitaxial planar type
For low frequency amplification
 Features
 Low collector-emitter saturation voltage V_CE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Basic Part Number
Dual DSA2401 (Individual)
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V_CBO
–15
V
V_CEO
–10
V
V_EBO
–7
V
I_C
– 0.5
A
I_CP
–1
A
P_T
300
mW
T_j
150
°C
T_stg –55 to +150 °C
 Package
 Code
Mini6-G4-B
 Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
 Marking Symbol: C0
 Internal Connection
(C1) (B2) (E2)
6
5
4
Tr1
Tr2
1
2
3
(E1) (B1) (C2)
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio ^*
Collector-emitter saturation voltage ^*
Base-emitter saturation voltage ^*
Transition frequency
V_CBO
V_CEO
V_EBO
I_CBO
h_FE1
h_FE2
V_CE(sat)
V_BE(sat)
f_T
I_C = –10 µA, I_E = 0
I_C = –1 mA, I_B = 0
I_E = –10 µA, I_C = 0
V_CB = –10 V, I_E = 0
V_CE = –2 V, I_C = – 0.5 A
V_CE = –2 V, I_C = –1 A
I_C = – 0.4 A, I_B = –8 mA
I_C = – 0.4 A, I_B = –8 mA
V_CE = –10 V, I_C = –50 mA
–15
–10
–7
–100
130
350
60
– 0.15 – 0.30
– 0.8 –1.2
250
Collector output capacitance
(Common base, input open circuited)
C_ob V_CB = –10 V, I_E = 0, f = 1 MHz
18
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Unit
V
V
V
nA

V
V
MHz
pF
Publication date: June 2010
ZJJ00608AED
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