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DMA20402 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DMA20402
Silicon PNP epitaxial planar type
For general ampliï¬cation
ï¢ Features
ï High forward current transfer ratio hFE with excellent linearity
ï Contributes to miniaturization of sets, reduction of component count.
ï Eco-friendly Halogen-free package
ï¢ Basic Part Number
Dual DSA2002 (Individual)
ï¢ Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
â60
V
VCEO
â50
V
VEBO
â5
V
IC
â500
mA
ICP
â1
A
PT
300
mW
Tj
150
°C
Tstg â55 to +150 °C
ï¢ Package
ï Code
Mini6-G4-B
ï Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
ï¢ Marking Symbol: B5
ï¢ Internal Connection
(C1) (B2) (E2)
6
5
4
Tr1
Tr2
1
2
3
(E1) (B1) (C2)
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
VCBO
VCEO
VEBO
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
IC = â10 µA, IE = 0
IC = â2 mA, IB = 0
IE = â10 µA, IC = 0
VCB = â20 V, IE = 0
VCE = â10 V, IC = â150 mA
VCE = â10 V, IC = â500 mA
IC = â300 mA, IB = â30 mA
IC = â300 mA, IB = â30 mA
VCE = â10 V, IC = â50 mA
â60
â50
â5
â 0.1
120
340
40
â 0.2 â 0.6
â 0.9 â1.5
130
Collector output capacitance
(Common base, input open circuited)
Cob VCB = â10 V, IE = 0, f = 1 MHz
7.3
15
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Unit
V
V
V
µA

V
V
MHz
pF
Publication date: April 2010
ZJJ00534CED
1
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