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DMA20401 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA20401
Silicon PNP epitaxial planar type
For general amplification
 Features
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Basic Part Number
Dual DSA2001 (Individual)
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
–60
V
VCEO
–50
V
VEBO
–7
V
IC
–100
mA
ICP
–200
mA
PT
300
mW
Tj
150
°C
Tstg –55 to +150 °C
 Package
 Code
Mini6-G4-B
 Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
 Marking Symbol: A7
 Internal Connection
(C1) (B2) (E2)
6
5
4
Tr1
Tr2
1
2
3
(E1) (B1) (C2)
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
IC = –10 µA, IE = 0
IC = –2 mA, IB = 0
IE = –10 µA, IC = 0
VCB = –20 V, IE = 0
VCE = –10 V, IB = 0
VCE = –10 V, IC = –2 mA
IC = –100 mA, IB = –10 mA
VCE = –10 V, IC = –2 mA
–60
–50
–7
– 0.1
–100
210
460
– 0.2 – 0.5
150
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz
2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
V
µA
µA

V
MHz
pF
Publication date: February 2010
ZJJ00533BED
1