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DE5S062D Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DE5S062D
Silicon epitaxial planar type
For surge absorption circuits
DE3S062D in SSMini5 type package
ï¢ Features
ï High electrostatic discharge ESD
ï Contributes to miniaturization of sets, reduction of component count.
ï Eco-friendly Halogen-free package
ï¢ Basic Part Number
Dual DE3S062D (Common Anode)
ï¢ Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Total power dissipation *1
Electrostatic discharge *2
PT
150
mW
ESD
±30
kV
Junction temperature
Tj
150
°C
Storage temperature
Tstg â55 to +150 °C
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
ï¢ Package
ï Code
SSMini5-F4-B
ï Pin Name
1: Cathode-1
2: Anode-1, 2, 3, 4
3: Cathode-2
4: Cathode-3
5: Cathode-4
ï¢ Marking Symbol: 41
ï¢ Internal Connection
5
4
123
ï¢ Common Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage *1, 2
VZ IR = 1 mA
5.89
6.51
V
Reverse current
IR
VR = 4 V
1
µA
Terminal capacitance
Temperature coefï¬cient of zener voltage *3
Ct VR = 0 V, f = 1 MHz
SZ IZ = 1 mA
55
pF
2.3
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranteed 20 ms after current ï¬ow.
*3: Tj = 25°C to 150°C
Publication date: October 2010
Ver. AED
1
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