DE3S062D Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DE3S062D
Silicon epitaxial planar type
For surge absorption circuits
 Features
 High electrostatic discharge ESD
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Total power dissipation ^*1
P_T
150
mW
Electrostatic discharge ^*2
ESD
±30
kV
Junction temperature
T_j
150
°C
Storage temperature
T_stg –55 to +150 °C
Note) *1: P_T = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
 Package
 Code
SSMini3-F3-B
 Pin Name
1: Cathode-1
2: Cathode-2
3: Anode-1, 2
 Marking Symbol: 41
 Internal Connection
3
1
2
 Common Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Zener voltage ^{*1, 2}
V_Z I_Z = 1 mA
5.89
6.51
V
Reverse current
I_R
V_R = 4 V
1
µA
Terminal capacitance
Temperature coefficient of zener voltage ^*3
C_t V_R = 0 V, f = 1 MHz
S_Z I_Z = 1 mA
55
pF
2.3
mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for V_Z measurement. V_Z value measured at other temperature must be adjusted to V_Z (25°C)
*2: VZ guaranteed 20 ms after current flow.
*3: Tj = 25°C to 150°C
Publication date: November 2010
Ver. AED
1