DB3X314K0L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For high speed switching circuits

DB3X314K
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Short reverse recovery time t_rr
 Small reverse current I_R
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
 Marking Symbol: 4X
 Packaging
DB3X314K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
Reverse voltage
V_R
30
V
Maximum peak reverse voltage
Forward current
V_RM
30
V
I_F
30
mA
Peak forward current
Junction temperature
Operating ambient temperature
Storage temperature
I_FM
150
mA
T_j
125
°C
T_opr –40 to +85 °C
T_stg –55 to +125 °C
1: Anode
2: N.C.
3: Cathode
Panasonic
JEITA
Code
Mini3-G3-B
SC-59A
TO-236AA/SOT-23
3
1
2
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F1 I_F = 1 mA
V_F2 I_F = 30 mA
0.4
V
1.0
Reverse current
I_R V_R = 30 V
300
nA
Terminal capacitance
Reverse recovery time ^*1
C_t V_R = 10 V, f = 1 MHz
1.5
pF
t_rr I_F = I_R = 10 mA, I_rr = 1 mA, R_L = 100 Ω
1.0
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*1: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_F
t_rr
t
I_F = 10 mA
I_R = 10 mA
R_L = 100 Ω
I_rr = 1 mA
Publication date: April 2013
Ver. CED
1