DB3X209K0L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – For high frequency rectification

Doc No. TT4-EA-12404
Revision. 2
DB3X209K0L
Silicon epitaxial planar type
For high frequency rectification
 Features
 Low forward voltage VF
 Short reverse recovery time trr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol:4S
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Reverse voltage
VR
20
V
Repctitive peak reverse voltage
VRRM
20
V
Forward current (Average)
IF(AV)
500
mA
Non-repetitive peak forward surge current ^*1 IFSM
3
A
Junction temperature
Tj
125
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -55 to +125 °C
Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Product Standards
Schottky Barrier Diode
DB3X209K0L
Unit: mm
2.9
0.4
0.16
3
1
2
1.1
(0.95)(0.95)
1.9
1. Anode
2. N.C
3. Cathode
Panasonic
Mini3-G3-B
JEITA
SC-59A
Code
TO-236AA/SOT-23
Internal Connection
3
1
2
Established : 2010-02-26
Revised : 2013-12-13
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