DB2X41400L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For high frequency rectification

Doc No. TT4-EA-12043
Revision. 3
DB2X41400L
Silicon epitaxial planar type
For high frequency rectification
 Features
 Low forward voltage VF
 Forward current (Average) IF(AV) = 2 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Product Standards
Schottky Barrier Diode
DB2X41400L
1.6
2
Unit: mm
0.13
 Marking Symbol: 4P
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage
VR
40
Repetitive peak reverse voltage
VRRM
40
Forward current (Average) ^*1
IF(AV)
2
Non-repetitive peak forward surge current ^*2 IFSM
15
Junction temperature
Tj
125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +125
Note: *1 For embedded alumina substrate
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
°C
1
0.55
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Mini2-F4-B
SC-109D
SOD-123
Internal Connection
2
1
Established : 2009-12-21
Revised : 2013-04-26
Page 1 of 4