DB2U30900L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-12641
Revision. 4
DB2W31900L
Silicon epitaxial planar type
For rectification
 Features
 Low forward voltage VF
 Low terminal capacitance Ct
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: 3W
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage (direct current)
VR
30
Forward current (average) ^*1
IF(AV)
3
Non-repetitive peak forward surge current ^*2 IFSM
30
Junction temperature
Tj
125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -55 to +125
Note) *1 For embedded alumina substrate (substrate size: 5 cm×5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
A
A
°C
°C
°C
Product Standards
Schottky Barrier Diode
DB2W31900L
1.6
2
Unit: mm
0.13
1
0.9
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Mini2-F3-B
SC-109B
―
Internal Connection
2
1
Established : 2010-06-22
Revised : 2013-05-29
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