DB2S20500L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-12420
Revision. 2
DB2S20500L
Silicon epitaxial planar type
For high frequency rectification
 Features
 Low forward voltage VF
 Short reverse recovery time trr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Product Standards
Schottky Barrier Diode
DB2S20500L
0.8
2
Unit: mm
0.13
 Marking Symbol:BA
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Reverse voltage
VR
20
V
Repetitive peak reverse voltage
VRRM
15
V
Forward current (Average)
IF(AV)
200
mA
Peak forward current
IFM
300
mA
Non-repetitive peak forward surge current ^*1 IFSM
1
A
Junction temperature
Tj
125
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -55 to +125 °C
Note: *1: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
1
0.3
0.6
1. Cathode
2. Anode
Panasonic
JEITA
Code
SSMini2-F5-B
SC-79
SOD-523
Internal Connection
2
1
Established : 2010-03-12
Revised : 2013-12-12
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