DB2J31000L Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

DB2J310
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Short reverse recovery time t_rr
 Low forward voltage V_F
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
 Marking Symbol: B7
 Packaging
DB2J31000L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
30
V
Repetitive peak reverse voltage
V_RRM
30
V
Forward current (Average)
I_F(AV)
200
mA
Peak forward current
I_FM
300
mA
Non-repetitive peak forward surge current ^*1
I_FSM
1
A
Junction temperature
T_j
125
°C
Operating ambient temperature
T_opr
–40 to +85
°C
Storage temperature
T_stg –55 to +125 °C
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
1: Cathode
2: Anode
Panasonic
JEITA
Code
Unit: mm
SMini2-F5-B
SC-90A

 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
V_F1 I_F = 5 mA
0.27
Forward voltage
V_F2 I_F = 100 mA
0.40
V
V_F3 I_F = 200 mA
0.47
Reverse current
I_R1 V_R = 10 V
I_R2 V_R = 30 V
20
µA
200
Terminal capacitance
Reverse recovery time ^*1
C_t V_R = 10 V, f = 1 MHz
4.5
pF
t_rr I_F = I_R = 100 mA, I_rr = 10 mA, R_L = 100 Ω
1.6
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
*1: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
t_r
t_p
10%
t
I_F
t_rr
t
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: April 2013
Ver. DED
1