DB2441700L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For rectification Low forward voltage VF

Doc No. TT4-EA-12395
Revision. 3
DB2441700L
Silicon epitaxial planar type
For rectification
 Features
 Low forward voltage VF
 Forward current (Average) IF(AV) = 5 A rectification is possible
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: 4W
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Rating
Reverse voltage
VR
40
Repetitive peak reverse voltage
VRRM
40
Forward current (Average)^*1
IF（AV）
5.0
Non-repetitive peak forward surge current ^*2 IFSM
50
Junction temperature
Tj
125
Operating ambient temperature
Topr -40 to +85
Storage temperature
Tstg -40 to +125
Note: *1 For embedded alumina substrate (substrate size: 5 cm× 5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
°C
Product Standards
Schottky Barrier Diode
DB2441700L
2.4
2
Unit: mm
0.15
1
1.75
0.85
1. Cathode
2. Anode
Panasonic
JEITA
Code
TMiniP2-F2-B
SC-110A
―
Internal Connection
2
1
Established : 2010-03-01
Revised : 2013-04-19
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