DB24307 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DB24307
Silicon epitaxial planar type
For rectification
 Features
 Low forward voltage V_F
 High forward current (Average) rating : I_F(AV) = 3 A
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
30
V
Maximum peak reverse voltage
V_RM
30
V
Forward current (Average)
I_F(AV)
3.0
A
Non-repetitive peak forward surge current ^*
I_FSM
50
A
Junction temperature
T_j
125
°C
Storage temperature
T_stg –55 to +125 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Package
 Code
TMiniP2-F2-B
 Pin Name
1: Cathode
2: Anode
 Marking Symbol: A5
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F I_F = 3.0 A
0.37
V
Reverse current
I_R V_R = 30 V
2.0
mA
Terminal capacitance
C_t V_R = 10 V, f = 1 MHz
111
pF
Reverse recovery time ^*
t_rr
I_F = I_R = 100 mA, I_rr = 10 mA,
R_L = 100 Ω
35
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 10 mA
I_F = 100 mA
I_R = 100 mA
R_L = 100 Ω
Publication date: October 2010
Ver. AED
1