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DA4X101F Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA4X101F
Silicon epitaxial planar type
For high speed switching circuits
ï¢ Features
ï Small reverse current IR
ï Short reverse recovery time trr
ï Contributes to miniaturization of sets, reduction of component count.
ï Eco-friendly Halogen-free package
ï¢ Basic Part Number
Dual DA2J101 (Parrarel, oppositely arranged)
ï¢ Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating Unit
Reverse voltage
VR
80
V
Maximum peak reverse voltage
VRM
80
V
Forward current
Single
100
mA
IF
Double
75
mA
Peak forward current
Single
225
mA
IFM
Double
170
mA
Non-repetitive peak forward Single
500
mA
surge current *
IFSM
Double
375
mA
Junction temperature
Storage temperature
Note) *: 1 t = 1 s
Tj
150
°C
Tstg â55 to +150 °C
ï¢ Package
ï Code
Mini4-G4-B
ï Pin Name
1: Anode-1
2: Cathode-2
3: Anode-2
4: Cathode-1
ï¢ Marking Symbol: 22
ï¢ Internal Connection
4
3
1
2
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 100 mA
0.95 1.20
V
Reverse voltage
VR IR = 100 µA
80
V
Reverse current
IR VR = 80 V
100
nA
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
0.9
2.0
pF
Reverse recovery time *
trr IF = 10 mA, VR = 6 V, Irr = 0.25 Ã IRã
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
Output Pulse
tr
tp
10%
t
IF
trr
t
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
Wave Form Analyzer
(SAS-8130)
Ri = 50 â¦
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.25 Ã IR
IF = 10 mA
VR = 6 V
Publication date: March 2010
ZKF00150AED
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