DA2S101 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DA2S101
Silicon epitaxial planar type
For high speed switching circuits
DA2J101 in SSMini2 type package
 Features
 Small reverse current I_R
 Short reverse recovery time t_rr
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Package
 Code
SSMini2-F5-B
 Pin Name
1: Cathode
2: Anode
 Marking Symbol: A1
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current ^*
Junction temperature
Storage temperature
V_R
80
V
V_RM
80
V
I_F
100
mA
I_FM
225
mA
I_FSM
500
mA
T_j
150
°C
T_stg –55 to +150 °C
Note) *: 1 t = 1 s
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F I_F = 100 mA
0.92 1.20
V
Reverse voltage
V_R I_R = 100 mA
80
V
Reverse current
I_R V_R = 80 V
100
nA
Terminal capacitance
C_t V_R = 0 V, f = 1 MHz
1.2
pF
Reverse recovery time ^*
t_rr I_F = 10 mA, V_R = 6 V, I_rr = 0.25 × I_R
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: t_rr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
R_s = 50 Ω
Wave Form Analyzer
(SAS-8130)
R_i = 50 Ω
Input Pulse
t_r
t_p
t
10%
V_R
90%
t_p = 2 µs
t_r = 0.35 ns
δ = 0.05
Output Pulse
I_F
t_rr
t
I_rr = 0.25 × I_R
I_F = 10 mA
V_R = 6 V
Publication date: November 2010
Ver. DED
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