DA2S001 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For band switching

Tentative
DA2S001
Total pages
page
DA2S001
Silicon epitaxial planar type
For band switching
Marking Symbol : D1
Package Code : SSMini2-F5-B
Absolute Maximum Ratings　Ta = 25 °C
Parameter
Symbol Rating
Unit
Reverse voltage(DC)
VR
35
V
Forward current (DC)
IF
100
mA
Junction temperature
Operating ambient temperature ^*1
Tj
150
°C
Topr -25 to +85
°C
Storage temperature
Tstg -55 to +150 °C
Note: 1. *1 Maximum ambient temperature during operation.
Pin name
1. Cathode
2. Anode
Electrical Characteristics　Ta = 25 °C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage(DC)
VF IF = 100 mA
1.0
V
Reverse current(DC)
IR VR = 33 V
100 nA
Diode capacitance
CD VR = 6 V, f = 1 MHz
1.2
pF
Forward dynamic resistance ^*1
rf IF = 2 mA, f = 100 MHz
0.85 Ω
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *1 Measuring instrument:YHP MODEL 4191A RF IMPEDANCE ANALYZER
Packing
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel
2010.1.28
Prepared
2010.7.29
Revised
Semiconductor Company, Panasonic Corporation