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DA2JF81 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA2JF81
Silicon epitaxial planar type
For high speed switching circuits
ï¢ Features
ï Small reverse current IR
ï High repetitive peak reverse voltage VRRM
ï Contributes to miniaturization of sets, reduction of component count.
ï Eco-friendly Halogen-free package
ï¢ Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak reverse voltage
VRRM
800
V
Non-repetitive peak reverse surge voltage
VRSM
800
V
Forward current
IF
200
mA
Non-repetitive peak forward surge current *1, 2
IFSM
1
A
Junction temperature
Tj â40 to +150 °C
Storage temperature
Tstg â40 to +150 °C
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
ï¢ Package
ï Code
SMini2-F5-B
ï Pin Name
1: Cathode
2: Anode
ï¢ Marking Symbol: 5A
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 200 mA
2.5
V
Reverse current
IRRM1
IRRM2
VRRM = 400 V
VRRM = 800 V
1
mA
10
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
0.6
pF
Reverse recovery time *
trr
IF = 100 mA, IR = 200 mA,
Irr = 0.25 Ã IR
10
45
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
50 â¦
50 â¦
trr
D.U.T.
5.5 â¦
IF
0.25 Ã IR
IR
Publication date: June 2010
ZKJ00029CED
1
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