DA2J10800L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For small current recitification High reverse voltage VR

Doc No. TT4-EA-12595
Revision. 3
DA2J10800L
Silicon epitaxial planar type
For small current recitification
 Features
 High reverse voltage VR
 Small reverse current IR
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: A2
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Reverse voltage
VR
300
V
Maximum peak reverse voltage
VRM
300
V
Output current
IO(AV)
200
mA
Repetitive peak forwand current
IFRM
600
mA
Non-repetitive peak forward surge current ^*1 IFSM
1
A
Junction temperature
Tj
150
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -55 to +150 °C
Note) *1: t = 1 s
Product Standards
Switching Diode
DA2J10800L
1.25
0.35
2
Unit: mm
0.13
1
0.5
0.7
1. Cathode
2. Anode
Panasonic
JEITA
Code
SMini2-F5-B
SC-90A
―
Internal Connection
2
1
Established : 2010-05-25
Revised : 2013-05-29
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