DA2J108 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J108
Silicon epitaxial planar type
For small current recitification
 Features
 Small reverse current I_R
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Maximum peak reverse voltage
Output current (Average)
Repetitive peak forward current
Non-repetitive peak forward surge current ^*
Junction temperature
Storage temperature
Note) *: 1 t = 1 s
V_R
300
V
V_RM
300
V
I_O(AV)
200
mA
I_FRM
600
mA
I_FSM
1
A
T_j
150
°C
T_stg –55 to +150 °C
 Package
 Code
SMini2-F5-B
 Pin Name
1: Cathode
2: Anode
 Marking Symbol: A2
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage (DC)
V_F I_F = 200 mA
1.2
V
Reverse current (DC)
I_R1 V_R = 200 V
I_R2 V_R = 300 V
200
nA
1
µA
Terminal capacitance
C_t V_R = 0 V, f = 1 MHz
3.5
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz
Publication date: June 2010
ZKF00171AED
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