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| DA2J107 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type | |||
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J107
Silicon epitaxial planar type
For speed switching circuits
DA3X107K in SMini2 type package
ï¢ Features
ï High reverse voltage VR
ï Small reverse current IR
ï Contributes to miniaturization of sets, reduction of component count.
ï Eco-friendly Halogen-free package
ï¢ Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
ï¢ Package
ï Code
SMini2-F5-B
ï Pin Name
1: Cathode
2: Anode
ï¢ Marking Symbol: B1
ï¢ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Repetitive peak forward current
Non-repetitive peak forward surge current *
Junction temperature
Storage temperature
Note) *: 1 t = 1 s
VR
300
V
VRRM
300
V
IF(AV)
100
mA
IFRM
225
mA
IFSM
500
mA
Tj
150
°C
Tstg â55 to +150 °C
ï¢ Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 100 mA
1.2
V
Reverse current
IR VR = 300 V
1.0
µA
Terminal capacitance
Ct VR = 6 V, f = 1 MHz
3.0
pF
Reverse recovery time *
trr IF = 10 mA, VR = 6 V, Irr = 0.25 Ã IR
60
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
Rs = 50 â¦
Wave Form Analyzer
(SAS-8130)
Ri = 50 â¦
Input Pulse
tr
tp
t
10%
VR
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.25 Ã IR
IF = 10 mA
VR = 6 V
Publication date: June 2010
ZKF00155AED
1
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