DA2J001 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DA2J001 (Tentative)
Silicon epitaxial planar type
For band switching
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Reverse voltage
V_R
35
V
Forward current
I_F
100
mA
Operating ambient temperature ^*
T_opr
–25 to +85
°C
Storage temperature
T_stg –55 to +150 °C
Note) *: Maximum ambient temperature during operation.
 Package
 Code
SMini2-F5-B
 Pin Name
1: Cathode
2: Anode
 Marking Symbol: D1
 Electrical Characteristics T_a = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F I_F = 100 mA
1.0
V
Reverse current
I_R V_R = 33 V
100
nA
Diode capacitance
C_D V_R = 6 V, f = 1 MHz
1.2
pF
Forward dynamic resistance ^*
r_f I_F = 2 mA, f = 100 MHz
0.85
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: Measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
Publication date: October 2009
ZKF00136AED
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