DA2DF62 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon epitaxial planar type For high frequency rectification

Tentative
DA2DF62
Silicon epitaxial planar type
For high frequency rectification
Marking Symbol : DA2DF62
Package Code : TO-220D-B1
Absolute Maximum Ratings　Ta = 25 °C
Parameter
Symbol Rating
Unit
Repetitive peak reverse voltage
VRRM
600
V
Non-repetitive peak peak reverse voltage VRSM
600
V
Forward current
Ta = 25 °C IF(AV)
10
A
Non-repetitive peak forward surge current ^* IFSM
40
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg -40 to +150 °C
Note: 1. *1 50 Hz sine wave 1cycle(Non-repetitive peak current)
DA2DF62
Total pages
page
Electrical Characteristics　Ta = 25 °C±3 °C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 10 A
1.4 1.7
V
Reverse current
IRRM VRRM = 600 V
10
μA
Reverse recovery time ^*1
trr
IF = 0.5 A, VR = 1.0 A
Irr = 0.25 A
25 40
ns
Themal resistance
Rth(j-c)
4.0 °C / W
Themal resistance
Rth(j-a)
63 °C / W
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for Diodes.
2. Absolute frequency of input and outpot is 10 MHz
3. *1 R-load trr test circuit
Packing
Magagine 50 pcs
2009.10.28
Prepared
2010.8.31
Revised
Semiconductor Company, Panasonic Corporation