DA22F2100L Datasheet, PDF (1/5 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

Doc No. TT4-EA-12363
Revision. 3
DA22F2100L
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Small reverse current IR
 Short reverse recovery time trr
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol: 3Q
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Non-repetitive peak reverse surge voltage VRSM
200
V
Forward current
IF
1.0
A
Non-repetitive peak forward surge current ^*1 IFSM
15
A
Junction temperature
Tj
-40 to +150
°C
Operating ambient temperature
Topr -40 to +85
°C
Storage temperature
Tstg -40 to +150 °C
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Product Standards
Fast Recovery Diode
DA22F2100L
1.6
2
Unit: mm
0.13
1
0.55
0.8
1. Cathode
2. Anode
Panasonic
JEITA
Code
Mini2-F4-B
SC-109D
SOD-123
Internal Connection
2
1
Established : 2010-02-12
Revised : 2013-05-23
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