DA22F21 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon epitaxial planar type

This product complies with the RoHS Directive (EU 2002/95/EC).
DA22F21
Silicon epitaxial planar type
For high speed switching circuits
 Features
 Short reverse recovery time t_rr
 Low impedance by clip bonding package
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak reverse voltage
V_RRM
200
V
Non-repetitive peak reverse surge voltage
V_RSM
200
V
Forward current
I_F
1.0
A
Non-repetitive peak forward surge current ^*
I_FSM
15
A
Junction temperature
T_j –40 to +150 °C
Storage temperature
T_stg –40 to +150 °C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
 Package
 Code
Mini2-F4-B
 Pin Name
1: Cathode
2: Anode
 Marking Symbol: 3Q
 Electrical Characteristics T_a = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
V_F I_F = 1.0 A
0.98
V
Reverse current
I_RRM V_RRM = 200 V
10
mA
Terminal capacitance
C_t V_R = 0 V, f = 1 MHz
60
pF
Reverse recovery time ^*
t_rr I_F = 0.5 A, I_R = 1 A, I_rr = 0.25 × I_R
35
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: t_rr measurement circuit
50 Ω
50 Ω
t_rr
D.U.T.
I_F
5.5 Ω
0.25 × I_R
I_R
Publication date: June 2010
ZKJ00030CED
1