CNZ2153 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Reflective Photosensor

Reflective Photosensors (Photo Reflectors)
CNZ2153 (ON2153)
Reflective photosensor
Non-contact point SW, object sensing
■ Overview
CNZ2153 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a Si phototransistor is used as the
light detecting element. The two elements are located parallel in the
same direction and objects are detected when passing in front of the
device.
Mark for indicating
LED side
7.5±0.2
(3.2)
Unit: mm
10.6±0.3
9.6±0.3
φ2.2±0.2
■ Features
• Fast response
• Small size and light weight
■ Applications
• Detection of paper, film and cloth • Optical mark reading
• Detection of coin and bill
• Detection of position and edge
• Start, end mark detection of magnetic tape
■ Absolute Maximum Ratings T_a = 25°C
φ0.45±0.05
(7.2)
φ0.3±0.05
*2-0.9±0.15
2
3
(Note)
1: Cathode
2: Anode
1
4
3: Emitter
4: Collector
PRSTR104-002 Package
1. ( ) Dimension is reference
2. _* is dimension at the root of leads
Parameter
Symbol Rating Unit
Input (Light Reverse voltage
V_R
3
V
emitting diode) Forward current
I_F
50
mA
Power dissipation ^*1
P_D
75
mW
Output (Photo Collector-emitter voltage V_CEO
30
V
transistor) (Base open)
Emitter-collector voltage V_ECO
5
V
(Base open)
Collector current
I_C
20
mA
Collector power dissipation ^*2 P_C
50
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
Note) _*1: Input power derating ratio is
1.0 mW/°C at T_a ≥ 25°C.
*2: ^{Output power derating ratio is}
0.67 mW/°C at T_a ≥ 25°C.
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input
Forward voltage
V_F
characteristics Reverse current
I_R
Terminal capacitance
C_t
Output
Collector-emitter cutoff current I_CEO
characteristics (Base open)
I_F = 50 mA
V_R = 3 V
V_R = 0 V, f = 1 MHz
V_CE = 10 V
1.2 1.5 V
10 µA
50
pF
0.2 µA
Transfer Collector current ^{*1, 2}
I_C V_CC = 5 V, I_F = 20 mA, R_L = 100 Ω
100
1200 µA
characteristics Collector-emitter saturation voltage V_CE(sat) I_F = 50 mA, I_C = 0.1 mA
0.5 V
Rise time
t_r V_CC = 10 V, I_C = 0.1 mA, R_L = 100 Ω
6.0
µs
Fall time
t_f
6.0
µs
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation ^IF
3. _*1: Output current measurement circuit
I_C ^VCC
d = 3 mm
(Ambient light is shut off completely)
*2: Rank classification
R_L
White paper
(Reflective ratio 90%)
Rank
I_C (µA)
Q
R
S
No-rank
100 to 300 200 to 600 400 to 1 200 100 to 1 200
Note) The part number in the parenthesis
shows conventional part number.
Publication date: April 2004
SHG00053BED
1