CNZ1120 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Photo Interrupter

Transmissive Photosensors (Photo Interrupters)
CNZ1120
Photo Interrupter
For contactless SW, object detection
Overview
CNZ1120 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
19.0±0.35
10.0±0.3
A
2-C0.5
Unit : mm
6.2±0.25
Features
Wide gap between emitting and detecting elements, suitable for
thick plate detection Gap : 10mm
Fast response : t_r, t_f = 6 µs (typ.)
The external case is molded using visible light cutoff resin. The
case has no openings, so the photosensor is not easily susceptible
to output attenuation resulting from dust or particles
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
3
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 20
V
transistor)
Emitter to collector voltage V_ECO
5
V
Collector power dissipation P_C*2 100 mW
Temperature
Operating ambient temperature T_opr –5 to +60 ˚C
Storage temperature
T_stg –15 to +65 ˚C
A'
(15.5)
2-0.45
(2.54)
SEC. A-A'
2
3
2
3
1
4
1
4
Pin connection
(Note) ( ) Dimension is reference
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input Forward voltage (DC)
V_F I_F = 50mA
1.2 1.5 V
characteristics Reverse current (DC)
I_R V_R = 3V
10 µA
Output Collector cutoff current
I_CEO V_CE = 10V, I_F = 0mA, I_D = 0mA^*1
200 nA
characteristics Collector to emitter capacitance C_C V_CE = 10V, f = 1MHz
5
pF
Collector current
I_C V_CE = 10V, I_F = 20mA, R_L = 100Ω 1.0
mA
Transfer
Response time
characteristics
t_r , t_f*2 V_CC = 10V, I_C = 1mA, R_L = 100Ω
6
µs
Collector to emitter saturation voltage V_CE(sat) I_F = 50mA, I_C = 0.1mA
0.4 V
*1 _{ID : Leakage current due to scattered light}
*2 _{Switching time measurement circuit}
Sig.IN
,, ^50Ω
V_CC
(Input pulse)
,, ^{Sig.OUT (Output pulse)}
R_L
t_d
t_r
90%
10%
t_f
t_d : Delay time
t_r : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
t_f : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
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