CNZ1111 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Photo Interrupters

Transmissive Photosensors (Photo Interrupters)
CNZ1111,CNZ1112
Photo Interrupters
For contactless SW, object detection
Overview
CNZ1111 and CNZ1112 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Features
Highly precise position detection : 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response : t_r, t_f = 6 µs (typ.)
Small output current variation against change in temperature
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
3
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
20
mA
Output (Photo Collector to emitter voltage VCEO 30
V
transistor)
Emitter to collector voltage V_ECO
5
V
Collector power dissipation P_C*2 100 mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg –30 to +100 ˚C
*1 _{Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.}
*2 _{Output power derating ratio is 1.33 mW/˚C at Ta ≥ 25˚C.}
CNZ1111
0.45±0.1
Unit : mm
Mark for indicating
LED side
25.0±0.35
13.0±0.3
5.0±0.2
A
0.45±0.1
A'
2-0.45±0.2
(10.0)
(2.54)
Device
center
2 19.0±0.2
SEC. A-A'
3
2-ø3.2±0.2
2
3
1
4
1
4
Pin connection
(Note) ( ) Dimension is reference
CNZ1112
0.45±0.1
Unit : mm
Mark for indicating
LED side
13.0±0.3
5.0±0.2
A
0.45±0.1
A'
2-0.45±0.2
(10.0)
(2.54)
Device
center
SEC. A-A'
2
3
1
4
2
3
1
4
Pin connection
(Note) ( ) Dimension is reference
1