CNZ1105 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Photo Interrupter For contactless SW, object detection

Transmissive Photosensors (Photo lnterrupters)
CNZ1105 (ON1105)
Photo Interrupter
Unit: mm
For contactless SW, object detection
Mark for Indicating
LED side
14.3±0.3
3.0±0.2
0.5±0.1
■ Overview
CNZ1105 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
■ Features
• Highly precise position detection: 0.3 mm
• Fast response t_r , t_f = 6 µs (typ.)
• Small output current variation against change in temperature
■ Absolute Maximum Ratings T_a = 25°C
Parameter
Symbol Rating Unit
4-0.45±0.2
(10.0)
(2)
(3)
(2.54)
2-φ3.2±0.2
(1)
19.0±0.2
(4)
25.0±0.35
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-007 Package
Input (Light ^{Reverse voltage}
V_R
3
V
Internal Connection
emitting diode) Forward current
I_F
50
mA
Power dissipation ^*1
P_D
75
mW
2
3
Output (Photo Collector-emitter voltage V_CEO
30
V
transistor) (Base open)
Emitter-collector voltage V_ECO
5
V
(Base open)
1
4
Collector current
I_C
20
mA
Collector power dissipation ^*2 P_C
100
mW
Temperature Operating ambient temperature T_opr −25 to +85 °C
Storage temperature
T_stg −30 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at
T_a ≥ 25°C.
*2: Output power derating ratio is 1.34 mW/°C
at T_a ≥ 25°C.
■ Electrical-Optical Characteristics T_a = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Input
Forward voltage
V_F I_F = 50 mA
characteristics Reverse current
I_R V_R = 3 V
Terminal capacitance
C_t V_R = 0 V, f = 1 MHz
Output
Collector-emitter cutoff current I_CEO V_CE = 10 V
characteristics (Base open)
Collector-emitter capacitance C_C V_CE = 0 V, f = 1 MHz
Transfer Collector current
I_C V_CE = 10 V, I_F = 20 mA
0.3
characteristics Collector-emitter saturation voltage V_CE(sat) I_F = 50 mA, I_C = 0.1 mA
Rise time ^*
t_r V_CC = 10 V, I_C = 1 mA, R_L = 100 Ω
Fall time ^*
t_f
Note) 1. Input and output are practiced
by electricity.
2. This device is designed be dis-
regarded radiation.
3. *: Switching time measurement circuit
Sig. in
V_CC
(Input pulse)
50 Ω
Sig. out
R_L
(Output pulse)t_d
t_r
Typ Max Unit
1.2 1.5 V
10 µA
50
pF
200 nA
5
pF
mA
0.3 V
6.0
µs
6.0
µs
t_d: Delay time
90% ^tr^{: Rise time}
10% ^tf^{: Fall time}
t_f
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00028BED
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