CNC1S171 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Optoisolator(For isolated signal transmission)

Optoisolators (Photocouplers)
CNC1S171
Optoisolator
For isolated signal transmission
Features
High current transfer ratio : CTR >50%
High I/O isolation voltage :
V_ISO = 5000 V_rms (min.)
Fast response :
t_r = 2 µs, t_f = 3 µs(typ.)
Low dark current : I_CEO < 100nA
VDE approved (VDE0884)
UL listed (No. E79920)
BSI certified
(BS415 No. 7889, BS7002 No. 7890)
SEMKO certified (No. 9625004)
DEMKO certified (No. 305848)
NEMKO certified (No. 199633176)
FIMKO certified (No. 191784)
CSA approved (No. CA109151)
Absolute Maximum Ratings (Ta = 25˚C)
Unit : mm
5.0 max.
0.3 min.
2.54 min.
1
4
2
3
7.62±0.3
6.2±0.5
10~12
0.25
+0.15
–0
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
6
V
Input (Light ^{Forward current (DC) I}F
50
mA
emitting diode) _{Pulse forward current IFP*1}
1
A
Power dissipation
P_D*2
75
mW
Collector current
I_C
50
mA
Output (Photo Collector to emitter voltage VCEO 80
V
transistor) Emitter to collector voltage V_ECO
7
V
Collector power dissipation P_C*3
150
mW
Isolation voltage, input to output
V_ISO 5000
V_rms
Total power dissipation
P_T
200
mW
Operating ambient temperature
T_opr –30 to +100 ˚C
Storage temperature
T_stg –55 to +125 ˚C
1
4
2
3
Pin connection
1: Anode
2: Cathode
3: Emitter
4: Collector
*1 _{Pulse width ≤ 100 µs, repeat 100 pps}
*2 _{Input power derating ratio is}
0.75 mW/˚C at Ta ≥ 25˚C.
*3 _{Output power derating ratio is}
1.5 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Reverse current (DC)
Input
characteristics ^{Forward voltage (DC)}
Capacitance between pins
I_R V_R = 3V
V_F I_F = 50mA
C_t V_R = 0V, f = 1MHz
10 µA
1.35 1.5 V
15
pF
Collector cutoff current
Output
characteristics ^{Collector to emitter voltage}
Collector to emitter capacitance
I_CEO
V_CEO
C_C
V_CE = 20V
I_C = 100µA
V_CE = 10V, f = 1MHz
DC current transfer ratio CTR^*1*4 V_CE = 10V, I_F = 5mA
5 100 nA
80
V
10
pF
50
600 %
Isolation voltage, input to output V_ISO t = 1 min., RH < 60%
5000
V_rms
Transfer ^{Isolation capacitance, input to output CISO f = 1MHz}
characteristics ^{Isolation resistance, input to output RISO VISO = 500V}
Rise time
t_r*2 V_CC = 10V, I_C = 5mA,
Fall time
t_f*3 R_L = 100Ω
0.7
pF
10¹¹
Ω
2
µs
3
µs
Collector to emitter saturation voltage V_CE(sat) I_F = 20mA, I_C = 1mA
*1 _{DC current transfer ratio (CTR) is a ratio of output current against DC input current.}
0.1 0.2 V
*2 _{tr : Time required for the collector current to increase from 10% to 90% of its final value}
*3 _{tf : Time required for the collector current to decrease from 90% to 10% of its initial value}
1