CNB2301 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Reflective Photosensor

Reflective Photosensors (Photo Reflectors)
CNB2301
Reflective Photosensor
Overview
CNB2301 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Darlington phototransistor used as the photo
detector in a single resin package.
Features
Ultraminiature : 2.7 × 3.4 mm
Visible light cutoff resin is used
High current-transfer ratio
Applications
Detection of paper, film and cloth Detection of position and edge
Detection of rotary positioning
Liquid level sensor
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Mark for indicating
anode side
C0.5
13
Chip
center
Unit : mm
4-0.7
4-0.5
±0.1
24
1.8
3.4±0.3
,,, ^0.5
0.15
1 23
4
Pin connection
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
3
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
30
mA
Output (Photo Collector to emitter voltage VCEO 20
V
transistor) Emitter to collector voltage V_ECO
5
V
Collector power dissipation P_C*2
75
mW
Temperature
Operating ambient temperature T_opr –25 to +85 ˚C
Storage temperature
T_stg –30 to +100 ˚C
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Forward voltage (DC)
Input
characteristics ^{Reverse current (DC)}
Capacitance between terminals
V_F I_F = 50mA
I_R V_R = 3V
C_t V_R = 0V, f = 1MHz
1.3 1.5 V
0.01 10 µA
30
pF
Output characteristics Collector cutoff current
I_CEO V_CE = 10V
1.0 µA
Collector current
I_C*1, ^*2 V_CC = 5V, I_F = 2mA, R_L = 100Ω, d = 1mm 0.46
12.0 mA
Transfer Leakage current
I_D V_CC = 5V, I_F = 2mA, R_L = 100Ω
2.0 µA
characteristics Response time
t_r*3 , t_f*4 V_CC = 10V, I_C = 1mA, R_L = 100Ω
150
µs
Collector to emitter saturation voltage V_CE(sat) I_F = 5mA, I_C = 0.5mA
1.5 V
*1 _{IC classifications}
Class
Q
I_C (mA)
0.46 to 1.75
R
1.3 to 4.95
S
3.15 to 12.0
*2 _{Output current measurement method}
Evaporated Al
Glass plate
(t = 1mm)
*3 _{Time required for the output current to increase from 10% to 90% of its final value}
*4 _{Time required for the output current to decrease from 90% to 10% of its initial value}
I_F
I_C ^RL
V_CC
1