CNB2001 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Reflective Photosensor

Reflective Photosensors (Photo Reflectors)
CNB2001
Reflective Photosensor
Overview
CNB2001 is a small, thin SMD-compatible reflective photosensor
consisting of a high efficiency GaAs infrared light emitting diode
which is integrated with a high sensitivity Darlington phototransistor
in a single resin package.
Features
Reflow-compatible reflective photosensor
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
High current-transfer ratio
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol Ratings Unit
Reverse voltage (DC) V_R
6
V
Input (Light
Forward current (DC)
emitting diode)
I_F
50
mA
Power dissipation
P_D*1
75
mW
Collector current
I_C
30
mA
Output (Photo Collector to emitter voltage VCEO 35
V
transistor) Emitter to collector voltage V_ECO
6
V
Collector power dissipation P_C*2
75
mW
Temperature ^{Operating ambient temperature Topr –25 to +85 ˚C}
Storage temperature
T_stg –40 to +100 ˚C
3.4
1.8
1
3
Unit : mm
C0.5
0.15
0.05^{+–00..015}
Chip
center
2
4-0.7
4
4-0.5
0.85
1.5
, , ^{,,,, 1 2 3}
4
Pin connection
, _{Color of rank}
, , 1: Anode
, ^{2: Cathode}
3: Emitter
4: Collector
(Note) Tolerance unless otherwise specified is ±0.2
*1 _{Input power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
*2 _{Output power derating ratio is}
1.0 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Input Forward voltage (DC)
V_F I_F = 20mA
characteristics Reverse current (DC)
I_R V_R = 3V
Output characteristics Collector cutoff current
I_CEO V_CE = 10V
Collector current
I_C*1 V_CC = 2V, I_F = 4mA, R_L = 100Ω, d = 1mm
Leakage current
Transfer
I_D V_CC = 2V, I_F = 4mA, R_L = 100Ω
characteristics ^{Collector to emitter saturation voltage VCE(sat) IF = 4mA, IC = 0.5mA}
Response time
t_r*2 V_CC = 2V, I_C = 10mA,
t_f*2 R_L = 100Ω
*1 _{Output Current (IC) measurement} *2 _{Response time measurement}
method (see figure below.)
circuit (see figure below.)
Glass plate
Evaporated Al
d = 1mm
Glass plate
Evaporated Al
d = 1mm
t_r : Rise time
t_f : Fall time
1.2 1.4 V
10 µA
1.0 µA
0.52
15.0 mA
5.0 µA
1.2 V
120
µs
115
Color indication of classifications
Class
I_C (µA)
Color
Q 0.52 to 1.94 Orange
Sig.IN
R
1.45 to 5.4 White
I_F
R_L
I_{C Sig.IN}
V_CC
50Ω
,, ,,,,,, _{Input and output are handled electrically.}
R_L
Sig. V_CC
OUT
Sig.OUT
t_r
90%
10%
t_f
S
4.0 to 15.0 Light blue
This product is not designed to withstand radiation.
1